This course consists of two parts. In the first part, students will perform experiments to verify practically the theories and concepts learned in EEE 425. In the second part, students will design simple systems using the principles learned in EEE 425.
VLSI MOS system design: Layout extraction and verification, full and semi- full custom design styles and logical and physical positioning. Design entry tools: Schematic capture and HDL. Logic and switch level simulation. Static timing. Concepts and tools of analysis, solution techniques for floor planning, placement, global routing and detailed routing. Application specific integrated circuit design including FPGA.
This course consists of two parts. In the first part, students will perform experiments to verify practically the theories and concepts learned in EEE 427. In the second
part, students will design simple systems using the principles learned in EEE 427.
Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap, density of carriers in intrinsic and doped compound semiconductors, Hetero Junctions: Band alignment, band offset, Anderson’s rule, single and double sided hetero- junctions, quantum wells and quantization effects, lattice mismatch and strain strain and common hetero-structure material systems. Hetero-Junction diode: Band banding, carrier transport and I- V characteristics. Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics. Hetero-structure bipolar transistor (HBT): Structure and operating principle, quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model, secondary effects and band diagram of graded alloy base HBT.
Optical properties in semiconductor: Direct and indirect band-gap materials,
radiative and non-radiative recombination, optical absorption, photo-generated excess carriers, minority carrier life time, luminescence and quantum efficiency in radiation. Properties of light: Particle and wave nature of light, polarization, interference, diffraction and blackbody radiation. Light emitting diode (LED): Principles, materials for visible and infrared LED, internal and external efficiency, loss mechanism, structure and coupling to optical fibers. Stimulated emission and light amplification: Spontaneous and stimulated emission, Einstein relation, population inversion, absorption of radiation, optical feedback and threshold conditions. Semiconductor Lasers: population inversion in degenerate semiconductors, laser activity, operating wavelength, threshold current density, power output, hetero-junction lasers, optical and electrical confinement. Introduction to quantum well lasers. Photo-detectors: Photoconductors, junction photodetectors, PIN detectors, avalanche photodiodes and phototransistors. Solar cells: Solar energy and spectrum, silicon and Schottkey solar cells. Modulation of light: Phase and amplitude modulation, electro-optic effect, acousto-optic effect and magneto-optic devices. Introduction to integrated optics.
Human body: Cells and physiological systems. Bioelectricity: Genesis and characteristics. Measurement of bio-signals: Ethical issues, transducers, amplifiers and filters. Electrocardiogram: Electrocardiography, phono-cardiograph, vector cardiograph, analysis and interpretation of cardiac signals, cardiac pacemakers and defibrillator. Blood pressure: Systolic, diastolic mean pressure, electronic manometer, detector circuits and practical problems in pressure monitoring. Blood flow measurement: Plethymography and electromagnetic flow
meter. Measurement and interpretation: Electroencephalogram, cerebral angiograph and cronical X-ray. Brain scans. Electromayogram (EMG). Tomography: Positron emission tomography and computer tomography. Magnetic resonance imaging. Ultrasonography. Patient monitoring system and medical telemetry. Effect of electromagnetic fields on human body.
Power semiconductor and switches and triggering devices: BJT, MOSFET, SCR, IGBT, GTO, TRISE, UJT and DIAC. Rectifiers: Uncontrolled and controlled single phase and three phase. Regulated power supplies: Linear- series and shunt, switching buck, buck-boost, boost and Cuk regulators. AC voltage controllers: single and three phase. Choppers. DC motor control. Single phase cyclo-converter. Inverters: Single and three-phase voltage and current sources. AC motor control. Stepper motor control. Resonance inverters. Pulse-width modulation control of static converters.
This course consists of two parts. In the first part, students will perform experiments to verify practically the theories and concepts learned in EEE 433. In the second part, students will design simple systems using the principles learned in EEE 433.
Lattice vibration: Simple harmonic model, dispersion relation, acoustic and optical phonons, Band structure: Isotropic and anisotropic crystals, band diagrams and effective masses of different semiconductors and alloys. Scattering theory: Review of classical theory, Fermi-Golden rule, scattering rates of different processes, scattering mechanisms in different semiconductors, mobility. Different carrier transport models: Drift-diffusion theory, ambipolar transport, hydrodynamic model, Boltzman transport equations, quantum mechanical model, simple applications.
Probability and random variables. Distribution and density functions and conditional probability. Expectation: moments and characteristics functions. Transformation of a random variable. Vector random variables. Joint distribution and density. Independence. Sums of random variables. Random processes. Correlation functions. Process measurements. Gaussian and Poisson random processes. Noise models. Stationary and Ergodicity. Spectral Estimation. Correlation and power spectrum. Cross spectral densities. Response of linear systems to random inputs. Introduction to discrete time processes, Mean-square error estimation, Detection and linear filtering.