EEE 201

Course Code: EEE 201
Course Name:
Electronic Devices and Circuits I
Credit Hours:
Detailed Syllabus:

P-N junction as a circuit element: Intrinsic and extrinsic semiconductors, operational principle of p-n junction diode, contact potential, current-voltage characteristics of adiode, simplified DC and AC diode models, dynamic resistance and capacitance. Diode circuits: Half-wave and full-wave rectifiers, rectifiers with filter capacitor, characteristics of a Zener diode, Zener shunt regulator, clamping and clipping circuits, photo diodes an LED circuits. Bipolar junction transistor (BJT) as circuit element: Current components, BJT characteristics and regions of operation, BJT as an amplifier, biasing the BJT for discrete circuits, small signal equivalent circuit models, BJT as a switch. Single stage mid-band frequency BJT amplifier circuits: voltage and current gain, input and output impedance of a common base, common emitter and common collector amplifier circuits. Metal oxide semiconductor field effect transistor (MOSFET) as circuit element: Structure and physical operation of an enhancement MOSFET, threshold voltage, body effect, current-voltage characteristics of an enhancement MOSFET, biasing discrete and integrated MOS amplifier circuits, single stage MOS amplifiers, MOSFET as a switch, CMOS inverter. Junction field effect transistor (JFET): Structure and physical operation of JFET, transistor characteristics, pinch-off voltage. Differential and multistage amplifiers: Description of differential amplifiers and small signal operation, differential and common mode gains, RC coupled mid-band frequency amplifier.